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QS8J11 Datasheet, PDF (1/7 Pages) Rohm – 1.5V Drive Pch + Pch MOSFET | |||
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Data Sheet
1.5V Drive Pch + Pch MOSFET
QS8J11
ï¬ Structure
Silicon P-channel MOSFET
ï¬ Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
ï¬Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive(1.5V drive).
ï¬ Application
Switching
(1) (2) (3) (4)
Abbreviated symbol : J11
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8J11
Taping
TCR
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ï12
VGSS
0 to ï8
ID
ï±3.5
IDP *1
ï±12
Is
ï1
Isp *1
ï12
PD *2
1.5
1.25
Tch
150
Tstg ï55 to ï«150
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
ï°C
ï°C
ï¬ Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
â2
â2
â1
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
100
Unit
ËC / W /TOTAL
ËC / W /ELEMENT
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.04 - Rev.A
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