QS8J1 Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch+Pch MOSFET

Transistors
1.5V Drive Pch+Pch MOSFET
QS8J1
QS8J1
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Low voltage drive. (1.5 V)
3) High power package.
zDimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
zApplications
Switching
Abbreviated symbol : J01 Each lead has same dimensions
zPackaging specifications
Type
QS8J1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zInner circuit
(8)
(7)
(6)
(5)
∗2
∗2
∗1
∗1
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
Tstg
Limits
−12
±10
±4.5
±18
−1
−18
1.5
1.25
150
−55 to +150
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
83.3
100
Unit
°C/W / TOTAL
°C/W / ELEMENT
1/5