QS8F2 Datasheet, PDF (1/7 Pages) Rohm – 1.5V Drive Pch MOSFET + PNP TRANSISTOR

Data Sheet
1.5V Drive Pch MOSFET + PNP TRANSISTOR
QS8F2
 Structure
Silicon P-channel MOSFET/
PNP TRANSISTOR
Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(1.5V drive).
 Application
Switching
(1) (2) (3) (4)
Abbreviated symbol : F02
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8F2
Taping
TR
3000

 Absolute maximum ratings (Ta = 25C)
<Tr1(Pch MOSFET)>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP^*
I_s
I_sp^*
* Pw10s, Duty cycle1%
Limits
12
10
2.5
10
1
10
Inner circuit
(8)
(7)
(6)
(5)
Unit
V
V
A
A
A
A
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Emitter
(4) Tr2 Base
(5) Tr2 Collector
(6) Tr2 Collector
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
<Tr2(PNP Tr)>
Parameter
Symbol Limits
Unit
Collector-Emitter voltage
V_CEO
30
V
Collector-Base voltage
V_CBO
30
V
Emitter-Base voltage
V_EBO
6
V
Collector current
Continuous
Pulsed
I_C
2
I_CP^*
4
A
A
* Pw1ms, Pulsed
<MOSFET and Di>
Parameter
Power dissipation
Junction temperature
Range of storage temperature
* Mounted on a ceramic board.
Symbol
P_D ^*
Tj
Tstg
Limits
Unit
1.5
W / TOTAL
1.25 W / ELEMENT
150
C
55 to 150
C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.04 - Rev.A