QS6Z5 Datasheet, PDF (1/8 Pages) Rohm – Complex Midium Power Transistors (50V/1A)

Data Sheet
Complex Midium Power Transistors (±50V/±1A)
QS6Z5
 Structure
NPN/PNP Silicon epitaxial planar transistor
 Features
1) Low saturation voltage
V_{CE (sat)} = 0.35V (Max.) (I_C / I_B= 500mA / 25mA)
V_{CE (sat)} = 0.40V (Max.) (I_C / I_B= 500mA / 25mA)
2) High speed switching
 Applications
Low Frequency Amplifier
Driver
 Dimensions (Unit : mm)
TSMT6
(1) Tr.1 Base
(2) Tr.2 Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Emitter
(6) Tr.1 Collector
Abbreviated symbol : Z05
 Packaging specifications
Type
Package
TSMT6
Code
TR
Basic ordering unit (pieces) 3000
 Inner circuit (Unit : mm)
(6)
(5)
(4)
 Absolute maximum ratings (Ta = 25C)
　<Tr.1>
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
V_CBO
V_CEO
V_EBO
I_C
I_CP *1
Limits
50
50
6
1
2
Unit
V
V
V
A
A
(1) Tr.1 Base
(2) Tr.2 Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Emitter
(1)
(6) Tr.1 Collector
(2)
(3)
　<Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol Limits
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
6
V
I_C
1
A
I_CP *1
2
A
　<Tr.1 and Tr.2>
Parameter
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm] ceramic board.
Symbol Limits
P_D ^*2
0.5
P_D ^*3
1.25
P_D ^*3
0.9
T_j
150
T_stg 55 to 150
Unit
W/Total
W/Total
W/Element
C
C
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2011.05 - Rev.A