QS6U24 Datasheet, PDF (1/3 Pages) Rohm – Small switching

Transistor
Small switching (−30V, −1A)
QS6U24
QS6U24
!Features
1) The QS6U24 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(4V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!External dimensions (Units : mm)
TSMT6
2.8
1pin mark
1.6
(1)Anode
(2)Source
(3)Gate
(4)Drain
(5)N/C
(6)Cathode
Each lead has same dimensions
Abbreviated symbol : U24
!Applications
load switch, DC/DC conversion
!Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
!Equivalent circuit
(6)
(5)
(4)
∗2
!Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6U24
Taping
TR
3000
!Absolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Channel temperature
<Di >
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
<MOSFET AND Di>
Parameter
Total power dissipatino
Range of strage temperature
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
Tch
Symbol
VRM
VR
IF
IFSM
Tj
Symbol
PD
Tstg
Limits
−30
±20
±1.0
±2.0
−0.3
−1.2
150
Limits
25
20
0.7
3.0
125
Limits
1.0
−40~+125
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Total mounted on a ceramic board
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Anode
(2)Source
(3)Gate
(3) ^(4)Drain
(5)N/C
(6)Cathode
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Unit
V
V
A
A ^∗1
A
A ^∗1
°C
Unit
V
V
A
A ^∗2
°C
Unit
W/Total ^∗3
°C
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