QS6U22 Datasheet, PDF (1/4 Pages) Rohm – Small switching (−20V, −1.5A)

Transistors
Small switching (−20V, −1.5A)
QS6U22
QS6U22
!Features
1) The QS6U22 combines Pch MOSFET with a
Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(4V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
!Applications
Load switch, DC / DC conversion
!Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
!External dimensions (Unit : mm)
TSMT6
2.8
1pin mark
1.6
Each lead has same dimensions
Abbreviated symbol : U22
!Equivalent circuit
(6)
(5)
(4)
!Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6U22
Taping
TR
3000
!Absolute maximum ratings (Ta=25°C)
〈MOSFET〉
Parameter
Symbol
Limits
Drain-source voltage
VDSS
−20
Gate-source voltage
VGSS
±12
Drain current
Continuous
ID
Pulsed
IDP
±1.5
±6.0
Source current
(Body diode)
Continuous
IS
Pulsed
ISP
−0.75
−6.0
Channel temperature
Tch
150
〈Di〉
Parameter
Symbol
Limits
Repetitive peak reverse voltage
VRM
25
Reverse voltage
VR
20
Forward current
IF
0.7
Forward current surge peak
IFSM
3.0
Junction temperature
Tj
150
〈MOSFET AND Di〉
Parameter
Symbol
Limits
Total power dissipation
PD
1.25
Range of Storage temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz⋅1cyc. ∗3 Total mounted on a ceramic board
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Anode
(2) Source
(3) Gate
(3) _{(4) Drain}
(5) N / C
(6) Cathode
∗A protection diode has been in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Unit
V
V
A
A
∗1
A
A
∗1
°C
Unit
V
V
A
A
∗2
°C
Unit
W / Total ^∗3
°C
1/3