QS6M4_1 Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch+Pch MOSFET

Transistors
2.5V Drive Nch+Pch MOSFET
QS6M4
QS6M4
zStructure
Silicon P-channel MOSFET
Silicon N-channel MOSFET
zFeatures
1) The QS6M4 combines Pch MOSFET with a Nch
MOSFET in a single TSMT6 package.
2) Low on-state resistance with a fast switching.
3) Low voltage drive (2.5V).
zApplications
Load switch, inverter
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : M04
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M4
Taping
TR
3000
zEquivalent circuit
(6)
(5)
(4)
∗1
∗2
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
Nchannel Pchannel
30
−20
±12
±12
±1.5
±1.5
±6.0
±6.0
0.8
−0.75
6.0
−6.0
1.25
0.9
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth (ch-a)^∗
Limits
100
139
Unit
°C / W / TOTAL
°C / W / ELEMENT
Rev.B
1/5