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QS6M3_1 Datasheet, PDF (1/8 Pages) Rohm – 2.5V Drive Nch+Pch MOSFET | |||
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Transistors
2.5V Drive Nch+Pch MOSFET
QS6M3
QS6M3
zStructure
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
zApplication
Power switching, DC / DC converter.
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : M03
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M3
Taping
TR
3000
zEquivalent circuit
(6)
(5)
(4)
â2
â2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
â2
PD
Tch
Tstg
Limits
Tr1 : Nch Tr2 : Pch
30
â20
±12
±12
±1.5
±1.5
±6.0
±6.0
0.8
â0.75
6.0
â6.0
1.25
0.9
150
â55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
â1
â1
(1)
(2)
(3)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth (ch-a)â
Limits
100
139
Unit
°C / W / TOTAL
°C / W / ELEMENT
Rev.B
1/7
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