QS6M3TR Datasheet, PDF (1/8 Pages) Rohm – 2.5V Drive Nch+Pch MOSFET

Transistors
2.5V Drive Nch+Pch MOSFET
QS6M3
QS6M3
zStructure
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
zApplication
Power switching, DC / DC converter.
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : M03
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M3
Taping
TR
3000
zEquivalent circuit
(6)
(5)
(4)
∗2
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
∗2
PD
Tch
Tstg
Limits
Tr1 : Nch Tr2 : Pch
30
−20
±12
±12
±1.5
±1.5
±6.0
±6.0
0.8
−0.75
6.0
−6.0
1.25
0.9
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
∗1
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth (ch-a)^∗
Limits
100
139
Unit
°C / W / TOTAL
°C / W / ELEMENT
Rev.B
1/7