QS6K21 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
QS6K21
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-state resistance with fast switching.
2) Low voltage drive (2.5V).
zApplication
Switching
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : K21
zInner circuit
(6)
(5)
(5)
∗2
∗2
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6K21
Taping
TR
3000
∗1
∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Symbol
VDSS
Gate−source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP ^∗1
Source current
(Body diode)
Continuous
Pulsed
IS
ISP ^∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Tch
Tstg
Limits
45
12
±1.0
±2.0
0.8
2.0
1.25
0.9
150
−55 to +150
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
(1) Tr1 Gate
(2) Tr2 Source
(3) ^{(3) Tr2 Gate}
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth (ch-a)^∗
Limits
100
139
Unit
°C / W / TOTAL
°C / W / ELEMENT
www.rohm.com
1/4
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.A