QS6J3TR Datasheet, PDF (1/4 Pages) Rohm – Small switching

Transistors
Small switching (−20V, −1.5A)
QS6J3
QS6J3
zFeatures
1) Two Pch MOSFET transistors in a single TSMT6
package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(2.5V).
zExternal dimensions (Unit : mm)
TSMT6
2.8
1pin mark
1.6
zApplications
Switch
zStructure
Silicon P-channel MOSFET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6J3
Taping
TR
3000
Each lead has same dimensions
Abbreviated symbol : J03
zEquivalent circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3)
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
ID
Pulsed
IDP
Source current
(Body diode)
Continuous
IS
Pulsed
ISP
Total power dissipation
PD
Channel temperature
Tch
Range of Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Limits
−20
±12
±1.5
±6.0
−0.75
−6.0
1.25
150
−55 to +150
Unit
V
V
A
A
∗1
A
∗1
A
W / Total ^∗2
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W / Total ^∗
1/3