QS6J11TR Datasheet, PDF (1/12 Pages) Rohm – Dual Pch -12V -2.0A Power MOSFET

QS6J11
Dual Pch -12V -2.0A Power MOSFET
V_DSS
R_DS(on) (Max.)
I_D
P_D
-12V
105mW
-2A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT6
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
Datasheet
lPackaging specifications
Packaging
lApplication
DC/DC converters
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings(T_a = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
V_DSS
I_D ^*1
I_D,pulse ^*2
V_GSS
P_D ^*3
P_D ^*4
T_j
Range of storage temperature
T_stg
Value
-12
2
8
10
1.25
0.6
150
-55 to +150
Taping
180
8
3,000
TR
J11
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.B