QS6J11 Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Pch+Pch MOSFET

1.5V Drive Pch+Pch MOSFET
QS6J11
zStructure
Silicon P-channel MOSFET
zFeatures
1) Two Pch MOSFET transistors in a single TSMT6 package.
2) Low on-state resistance with a fast switching.
3) Low voltage drive (1.5V).
zApplications
Switching
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0~0.1
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : J11
zInner circuit
(6)
(5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6J11
Taping
TR
3000
∗2
∗2
∗1
∗1
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(1)
(2)
(3) _{(4) Tr2 Drain}
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr1 Source
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS ^∗1
ISP
Total power dissipation
PD ^∗2
Channel temperature
Range of Storage temperature
∗1 Pw <_−10µs, Duty cycle <_−1%
∗2 Mounted on a ceramic board
Tch
Tstg
Limits
−12
+−₁₀
+−₂
+−₈
−0.75
−8
1.25
0.9
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth (ch-a)^∗
Limits
100
139
Unit
°C / W / TOTAL
°C / W / ELEMENT
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2009.05 - Rev.A