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QS6J1 Datasheet, PDF (1/4 Pages) Rohm – Small switching (-20V, -1.5A) | |||
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Transistors
Small switching (â20V, â1.5A)
QS6J1
QS6J1
zFeatures
1) Two Pch MOSFET transistors in a single TSMT6
package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(2.5V).
zExternal dimensions (Unit : mm)
TSMT6
2.8
1pin mark
1.6
zApplications
Switch
Each lead has same dimensions
Abbreviated symbol : J01
zStructure
Silicon P-channel MOSFET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6J1
Taping
TR
3000
zEquivalent circuit
(6)
(5)
(4)
â2
â2
â1
â1
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 Gate
(2) Tr2 Source
(3)
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
ID
Pulsed
IDP
Source current
(Body diode)
Continuous
IS
Pulsed
ISP
Total power dissipation
PD
Channel temperature
Tch
Range of Storage temperature
Tstg
â1 Pw <â10µs, Duty cycle <â1% â2 Mounted on a ceramic board
Limits
â20
+â12
+â1.5
+â6
â0.75
â6
1.25
150
â55 to +150
Unit
V
V
A
A
â1
A
â1
A
W / Total â2
C
C
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W / Total
1/3
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