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QS5Y1 Datasheet, PDF (1/8 Pages) Rohm – Midium Power Transistors (30V / 3A) | |||
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Data Sheet
Midium Power Transistors (±30V / ±3A)
QS5Y1
ï¬ Structure
PNP/NPN Silicon epitaxial planar transistor
ï¬ Dimensions (Unit : mm)
TSMT5
ï¬ Features
1) Low saturation voltage, typically
VCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA)
VCE (sat) = 0.40V (Max.) (IC / IB= 1A / 50mA)
2) High speed switching
ï¬ Applications
Low Frequency Amplifier
Driver
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
Abbreviated symbol : Y01
ï¬ Packaging specifications
Type
Package
TSMT5
Code
TR
Basic ordering unit (pieces) 3000
ï¬ Absolute maximum ratings (Ta = 25ï°C)
ã<Tr.1>
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
VCBO
VCEO
VEBO
IC
ICP *1
Limits
-30
-30
-6
-3
-6
Unit
V
V
V
A
A
ï¬ Inner circuit (Unit : mm)
(5)
(4)
Tr.1
Tr.2
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector (1)
(2)
(3)
(5) Tr.1 Collector
ã<Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
Limits
30
30
6
3
6
Unit
V
V
V
A
A
ã<Tr.1 and Tr.2>
Parameter
Symbol Limits
Power dissipation
Junction temperature
Range of storage temperature
PD *2
PD *3
PD *3
Tj
Tstg
0.5
1.25
0.9
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
Unit
W/Total
W/Total
W/Element
ï°C
ï°C
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1/7
2011.02 - Rev.A
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