QS5W1 Datasheet, PDF (1/6 Pages) Rohm – Midium Power Transistors (30V / 3A)

Data Sheet
Midium Power Transistors (30V / 3A)
QS5W1
 Structure
NPN Silicon epitaxial planar transistor
 Features
1) Low saturation voltage
V_{CE (sat)} = 0.4V (Max.) (I_C / I_B= 1A / 50mA)
2) High speed switching
 Applications
Low Frequency Amplifier
Driver
 Dimensions (Unit : mm)
TSMT5
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2
(5) Tr.1
Collector
Collector
Abbreviated symbol
: W01
 Packaging specifications
Type
Package
TSMT5
Code
TR
Basic ordering unit (pieces) 3000
 Absolute maximum ratings (Ta = 25C)
　<It is the same ratings for the Tr.1 and Tr.2>
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP ^*1
P_D ^*2
P_D ^*3
P_D ^*3
T_j
T_stg
30
30
6
3
6
0.5
1.25
0.9
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
Unit
V
V
V
A
A
W/Total
W/Total
W/Element
C
C
 Inner circuit (Unit : mm)
(5)
(4)
Tr.1
Tr.2
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
(1)
(2)
(3)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.02 - Rev.A