QS5U33 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch+SBD MOSFET

Transistor
4V Drive Pch+SBD MOSFET
QS5U33
QS5U33
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U33 combines Pch MOSFET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (4V).
4) Built-in schottky barrier diode has low forward voltage.
zApplications
Load switch, DC/DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS5U33
Taping
TR
3000
zDimensions (Unit : mm)
TSMT5
2.9
1.9
0.95 0.95
(5) (4)
1.0MAX
0.85
0.7
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : U33
zEquivalent circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) ^(3)Anode
(4)Cathode
(5)Drain
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
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