QS5U28_06 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Pch+SBD MOS FET

Transistor
2.5V Drive Pch+SBD MOS FET
QS5U28
QS5U28
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U28 combines Pch MOS FET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zApplications
Load switch, DC/DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS5U28
Taping
TR
3000
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.95 0.95
(5) (4)
1.0MAX
0.85
0.7
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : U28
zEquivalent circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) ^(3)Anode
(4)Cathode
(5)Drain
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Rev.A
1/4