QS5U27 Datasheet, PDF (1/4 Pages) Rohm – Small switching (-20V, -1.5A)

Transistor
Small switching (−20V, −1.5A)
QS5U27
QS5U27
!Features
1) The QS5U27 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(2.5V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!External dimensions (Units : mm)
2.8
TSMT5
1.6
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
0.3~0.6
Each lead has same dimensions
Abbreviated symbol : U27
!Applications
load switch, DC/DC conversion
!Structure
•Silicon P-channel MOS FET
•Schottky Barrier DIODE
!Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS5U27
Taping
TR
3000
!Absolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Channel temperature
<Di >
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
<MOSFET AND Di>
Parameter
Total power dispation
Range of strage temperature
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
Tch
Symbol
VRM
VR
IF
IFSM
Tj
Symbol
PD
Tstg
Limits
−20
±12
±1.5
±6.0
−0.75
−3.0
150
Limits
25
20
1.0
3.0
125
Limits
1.0
−40~+125
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz • 1cyc. ∗3 Mounted on a ceramic board.
!Equivalent circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) ^(3)Anode
(4)Cathode
(5)Drain
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Unit
V
V
A
A ^∗1
A
A ^∗1
°C
Unit
V
V
A
A ^∗2
°C
Unit
W / TOTAL ^∗3
°C
1/3