QS5U26 Datasheet, PDF (1/4 Pages) Rohm – Pch Treueh MOSFET with a Schottky barrier Diode

Transistor
Small switching (−20V, −1.5A)
QS5U26
QS5U26
!Features
1) The QS5U26 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(2.5V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!External dimensions (Units : mm)
2.8
TSMT5
1.6
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
0.3~0.6
Each lead has same dimensions
Abbreviated symbol : U26
!Applications
load switch, DC/DC conversion
!Structure
•Silicon P-channel MOS FET
•Schottky Barrier DIODE
!Equivalent circuit
(5)
(4)
∗2
!Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS5U26
Taping
TR
3000
!Absolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Limits
Drain-source voltage
VDSS
−20
Gate-source voltage
VGSS
±12
Drain current
Continuous
ID
Pulsed
IDP
±1.5
±6.0
Source current
(Body diode)
Continuous
IS
Pulsed
ISP
−0.75
−3.0
Channel temperature
<Di >
Tch
150
Parameter
Symbol
Limits
Repetitive peak reverse voltage
VRM
30
Reverse voltage
VR
20
Forward current
IF
0.5
Forward current surge peak
IFSM
2.0
Junction temperature
<MOSFET AND Di>
Tj
125
Parameter
Symbol
Limits
Total power dissipatino
PD
1.0
Range of strage temperature
Tstg
−40~+125
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz •1cyc. ∗3 Mounted on a ceramic board.
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) _(3)Anode
(4)Cathode
(5)Drain
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Unit
V
V
A
A ^∗1
A
A ^∗1
°C
Unit
V
V
A
A ^∗2
°C
Unit
W/TOTAL^∗3
°C
1/3