QS5U23_06 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Pch+SBD MOS FET

Transistor
2.5V Drive Pch+SBD MOS FET
QS5U23
QS5U23
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS5U23 combines Pch MOS FET with a
Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive(2.5V)
4) Built-in schottky barrier diode has low forward voltage.
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.95 0.95
(5) (4)
1.0MAX
0.85
0.7
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : U23
zApplications
Load switch , DC/DC conversion
zPackaging specifications
Type
QS5U23
Package
Code
Basic ordering unit
(pieces)
Taping
TR
3000
zEquivalent circuit
(5)
(4)
∗2
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
∗1
(5)CATHODE
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Rev.A
1/4