QS5U23 Datasheet, PDF (1/5 Pages) Rohm – Small switching (-20V, -1.5A)

Transistor
Small switching (–20V, –1.5A)
QS5U23
QS5U23
zFeatures
1) The QS5U23 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The independently connected Schottky barrier diode
have a low forward voltage.
zApplications
Load switch , DC/DC conversion
zStructure
• Silicon P-channel MOSFET
• Schottky Barrier DIODE
zPackaging specifications
Type
QS5U23
Package
Code
Basic ordering unit
(pieces)
Taping
TR
3000
zExternal dimensions (Units : mm)
21..99+−+−00..12
0.95 0.95
(5)
(4)
1.0MAX
0.85+−0.1
0.7+−0.1
(1) (2) (3)
0.4 _{−+00..015}
0.16 _{−+00..016}
Each lead has same dimensions
0∼0.1
Abbreviated symbol : U23
(5)
(4)
∗2
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
∗1
(5)CATHODE
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zEquivalent circuit
zAbsolute maximum ratings (Ta=25°C)
< MOSFET >
Parameter
Symbol
Limits
Drain−source voltage
VDSS
−20
Gate−source voltage
VGSS
±12
Drain current
Continuous
ID
Pulsed
IDP
±1.5
± 6.0
Source current
(Body diode)
Continuous
IS
Pulsed
ISP
−0.75
−3.0
Channel temperature
Tch
150
Unit
V
V
A
A
Pw ^<=10µs, Duty cycle<=1%
A
A
Pw ^<=10µs, Duty cycle<=1%
°C
< Di >
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
VRM
30
V
VR
20
V
IF
0.5
A
IFSM
2.0
A 60Hz / 1CYC
Tj
125
°C
< MOSFET AND Di >
Total power dissipation
Range of strage temperature
PD
Tstg
1.0
−40∼125
W / TOTAL MOUNTED ON
A CERAMIC BOARD
°C
1/4