QS5U21 Datasheet, PDF (1/4 Pages) Rohm – Small switching (-20V, -1.5A)

Transistor
Small switching (–20V, –1.5A)
QS5U21
QS5U21
zFeatures
1) The QS5U21 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The Independently connected Schottky barrier diode
have a low forward voltate.
zApplications
Load switch, DC/DC conversion
zExternal dimensions (Units : mm)
2.9 _−+ 0.1
1.9 +− 0.2
0.95 0.95
(5)
(4)
1.0MAX
0.85_−+0.1
0.7+−0.1
0 to 0.1
(1) (2) (3)
0.4
+0.1
−0.05
Each lead has
same
dimensions0.16^{+−00..106}
Abbreviated symbole : U21
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zPackaging specifications
Type
QS5U21
Package
Code
Basic ordering unit
(pieces)
Taping
TR
3000
zEquivalent circuit
(5)
(4)
∗2
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
∗1
(5)CATHODE
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
< MOSFET >
Parameter
Symbol Limits
DRAIN−SOURCE VOLTAGE
VDSS
−20
V
GATE−SOURCE VOLTAGE
VGSS
±12
V
DRAIN CURRENT
CONTINUOUS ID
PULSED
IDP
±1.5
A
±6.0
A
SOURCE CURRENT
(BODY DIODE)
CONTINUOUS IS
PULSED
ISP
−0.75
A
−0.3
A
CHANNEL TEMPERATURE
Tch
150
C
< Di >
REPETITIVE PEAK REVERSE VOLTAGE VRM
25
V
REVERSE VOLTAGE
VR
20
V
FORWARD CURRENT
IF
1.0
A
FORWARD CURRENT SURGE PEAK
IFSM
3.0
A
JUNCTION TEMPERATURE
Tj
125
C
< MOSFET AND Di >
TOTAL POWER DISSIPATION
PD
1.0
RANGE OF STRAGE TEMPERATURE
Tstg −40∼125 C
Unit
PW<=10µs DUTY CYCLE ^<=1%
PW<=10µs DUTY CYCLE ^<=1%
60HZ / 1CYC.
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
1/4