QS5U16_06 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Nch+SBD MOS FET

Transistors
2.5V Drive Nch+SBD MOS FET
QS5U16
QS5U16
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U16 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
zApplications
Load switch, DC / DC conversion
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.95 0.95
(5) (4)
1.0MAX
0.85
0.7
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : U16
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS5U16
Taping
TR
3000
zEquivalent circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) _{(3) Anode}
(4) Cathode
(5) Drain
Rev.A
1/4