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QS5U12_1 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Nch+SBD MOS FET | |||
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Transistors
2.5V Drive Nch+SBD MOS FET
QS5U12
QS5U12
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U12 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
zApplications
Load switch, DC / DC conversion
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.95 0.95
(5) (4)
1.0MAX
0.85
0.7
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : U12
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS5U12
Taping
TR
3000
zEquivalent circuit
(5)
(4)
â2
â1
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Anode
(2) Source
(3) (3) Gate
(4) Drain
(5) Cathode
Rev.B
1/4
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