QS5U12 Datasheet, PDF (1/5 Pages) Rohm – Small switching (30V, 2.0A)

Transistors
Small switching (30V, 2.0A)
QS5U12
QS5U12
zFeatures
1) The QS5U12 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Nch MOSFET have a low on-state resistance with a
fast switching.
3) Nch MOSFET is reacted a low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
zApplications
Load switch, DC / DC conversion
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS5U12
Taping
TR
3000
zExternal dimensions (Unit : mm)
2.9±0.1
1.9±0.2
0.95 0.95
1.0MAX
0.85±0.1
0.7±0.1
(5)
(4)
0 to 0.1
(1) (2) (3)
0.4^{+−00..105}
0.16 ^{+−00..106}
Each lead has same dimensions
Abbreviated symbol : U21
zEquivalent circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Anode
(2) Source
(3) _{(3) Gate}
(4) Drain
(5) Cathode
Rev.A
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