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QS5K2 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch+Nch MOS FET | |||
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Transistors
2.5V Drive Nch+Nch MOS FET
QS5K2
QS5K2
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
3) Space saving, small surface mount package (TSMT5).
zApplications
Switching
zPackaging specifications
Type
QS5K2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zExternal dimensions (Unit : mm)
TSMT5
2.9
1.9
0.95 0.95
(5) (4)
1.0MAX
0.85
0.7
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : K02
zInner circuit
(5)
â2
(4)
â2
â1
â1
(1)
(2)
(3)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 Gate
(2) Tr1 Source
Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
Total power dissipation
PD â2
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
Tch
Tstg
Limits
30
12
±2.0
±8.0
0.8
3.2
1.25
0.9
150
â55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
100
139
Unit
°C/W
°C/W
1/2
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