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QH8KA4 Datasheet, PDF (1/14 Pages) Rohm – 30V Nch+Nch Middle Power MOSFET
QH8KA4
  30V Nch+Nch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
17.0mΩ
±9.0A
1.5W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package .
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
5) 100% avalanche tested.
lOutline
TSMT8
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
Battery
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
KA4
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30
V
Continuous drain current
Pulsed drain current
ID
±9.0
A
IDP*1
±40
A
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
VGSS
IAS*2
EAS*2
±12
V
9.0
A
6.2
mJ
Power dissipation
total
element
1.5
PD*3
1.25
W
total
PD*4
1.1
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
                                                                                        
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