MMSTA13_11 Datasheet, PDF (1/3 Pages) Rohm – NPN small signal transistor

NPN small signal transistor
MMSTA13
Features
(1) High Current Gain.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
MMSTA13
Taping
T146
3000
Dimensions (Unit : mm)
MMSTA13
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
Abbreviated symbol : R1M
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCES
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits
30
30
10
0.3
0.2
0.35
150
−55 to 125
Unit
V
V
V
A
W
W∗
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES 30
Collector-emitter breakdown voltage BVCEO 30
Emitter-base breakdown voltage
BVEBO 10
Collector-base cutoff current
ICBO
−
Emitter-base cutoff current
ICEO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter voltage
VBE(on)
−
DC current transfer ratio
5000
hFE
10000
Transition frequency
fT
125
Collector output capacitance
∗ Pulsed
Cob
−
Typ.
−
−
−
−
−
−
−
−
−
−
5.4
Max.
−
−
−
0.1
0.1
1.5
2.0
−
−
−
−
Unit
V
V
V
μA
μA
V
V
−
MHz
pF
Conditions
IC= 100μA
IC= 10μA
IE= 10μA
VCB= 30V
VEB= 10V
IC/IB= 100mA/ 100μA
VCE= 5V, IC= 100mA ^∗
VCE= 5V, IC= 10mA
VCE= 5V, IC= 100mA ^∗
VCE= 5V, IE= −10mA, f=100MHz
VCB= 10V, f=100kHz, IE= 0
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2011.09 - Rev.B