MMSTA13 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Transistors
NPN small signal transistor
MMSTA13
MMSTA13
zFeatures
1) High Current Gain.
zDimensions (Unit : mm)
MMSTA13
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
MMSTA13
Taping
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCES
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits
30
30
10
0.3
0.2
0.35
150
−55 to 125
(1)Emitter
(2)Base
(3)Collector
Unit
V
V
V
A
W
W
°C
°C
2.9
1.1
0.4
0.8
(3)
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
Abbreviated symbol : R1M
∗
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Collector-emitter breakdown voltage BVCES 30
−
Collector-emitter breakdown voltage BVCEO 30
−
Emitter-base breakdown voltage
BVEBO 10
−
Collector-base cutoff current
ICBO
−
−
Emitter-base cutoff current
ICEO
−
−
Collector-emitter saturation voltage VCE(sat) −
−
Base-emitter voltage
VBE(on)
−
−
DC current transfer ratio
5000 −
hFE
10000 −
Transition frequency
Collector output capacitance
∗ Pulsed
fT
125 −
Cob
−
5.4
Max.
−
−
−
0.1
0.1
1.5
2.0
−
−
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
Conditions
IC= 100µA
IC= 10µA
IE= 10µA
VCB= 30V
VEB= 10V
IC/IB= 100mA/ 100µA
VCE= 5V, IC= 100mA ^∗
VCE= 5V, IC= 10mA
VCE= 5V, IC= 100mA ^∗
VCE= 5V, IE= −10mA, f=100MHz
VCB= 10V, f=100kHz, IE= 0
1/1