IMX9T110 Datasheet, PDF (1/4 Pages) Rohm – General purpose transistor (isolated dual transistors)

Transistors
IMX9
General purpose transistor
(isolated dual transistors)
IMX9
zFeatures
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zExternal dimensions (Units : mm)
2.9±0.2
1.9±0.2
0.95 0.95
(4) (5) (6)
1.1^{+−00..21}
0.8±0.1
0~0.1
(3) (2) (1)
0.3
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X9
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗ 200mW per element must not be exceeded.
Limits
25
20
12
500
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
mW _∗
°C
°C
zEquivalent circuit
(4) (5) (6)
Tr1
Tr2
(3) (2) (1)
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Ron
Min.
25
20
12
−
−
−
560
−
−
−
Typ.
−
−
−
−
−
0.18
−
350
8
0.8
Max.
−
−
−
0.5
0.5
0.4
2700
−
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Ω
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=20V
VEB=10V
IC/IB=500mA/20mA
VCE=3V, IC=10mA
VCE=10V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
IB=1mA, Vi=100mVrms, f=1kHz