IMX8 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Transistors
IMX8
General purpose (dual transistors)
IMX8
zFeatures
1) Two 2SC3906K chips in an SMT package.
2) High breakdown voltage.
zPackage, marking, and packaging specifications
Part No.
IMX8
Package
Marking
Code
Basic ordering unit (pieces)
SMT6
X8
T108
3000
zEquivalent circuit
(4) (5) (6)
Tr2
Tr1
(3) (2) (1)
zExternal dimensions (Unit : mm)
ROHM : SMT6
EIAJ : SC-74
1.6
2.8
0.3Min.
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
∗ 200mW per element must not be exceeded.
Limits
120
120
5
50
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW
∗
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
∗Transition frequency of the device
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
VCE(sat)
Min. Typ. Max. Unit
Conditions
120
−
−
V IC=50µA
120
−
−
V IC=1mA
5
−
−
V IE=50µA
−
−
0.5
µA VCB=100V
−
−
0.5
µA VEB=4V
180
−
820
−
VCE=6V, IC=2mA
−
140
−
MHz VCE=12V, IE= −2mA, f=100MHz
∗
−
−
0.5
V IC/IB=10mA/1mA
Rev.A
1/2