IMX25T110 Datasheet, PDF (1/4 Pages) Rohm – General purpose transistor (isolated dual transistors)

General purpose transistor
(isolated dual transistors)
IMX25
Features
1) Two 2SD2704K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting machine.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
Dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95 0.95
(4) (5) (6)
1.1^{+−00..21}
0.8±0.1
0 to 0.1
(3) (2) (1)
0.3
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X25
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗ ^{200mW per element must not be exceeded.}
Limits
50
20
25
300
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW _∗
°C
°C
Inner circuit
(4) (5) (6)
Tr1
Tr2
(3) (2) (1)
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 50
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO 25
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
820
Transition frequency
fT
−
Output capacitance
Cob
−
Output On-resistance
Ron
−
Typ.
−
−
−
−
−
50
−
35
3.9
0.7
Max.
−
−
−
0.1
0.1
100
2700
−
−
−
Unit
V
V
V
μA
μA
mV
−
MHz
pF
Ω
Conditions
IC=10μA
IC=1mA
IE=10μA
VCB=50V
VEB=25V
IC/IB=30mA/3mA
VCE=2V, IC=4mA
VCE=6V, IE=−4mA, f=10MHz
VCB=10V, IE=0A, f=1MHz
IB=5mA, Vi=100mVrms, f=1kHz
Packaging specifications
Packaging type
Code
Part No. Basic ordering unit (pieces)
IMX25
Taping
T110
3000
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2010.02 - Rev.B