IMX25 Datasheet, PDF (1/5 Pages) Rohm – General purpose transistor (isolated dual transistors)

Transistors
IMX25
General purpose transistor
(isolated dual transistors)
IMX25
zFeatures
1) Two 2SD2704K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting machine.
3) Transistorelementsareindependent,eliminating interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zExternal dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95 0.95
(4) (5) (6)
1.1^{+−00..21}
0.8±0.1
0 to 0.1
(3) (2) (1)
0.3
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X25
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗ 200mW per element must not be exceeded.
Limits
50
20
25
300
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW _∗
°C
°C
zEquivalent circuit
(4) (5) (6)
Tr1
Tr2
(3) (2) (1)
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 50
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO 25
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
DC current transfer ratio
hFE
820
Transition frequency
fT
−
Output capacitance
Cob
−
Output On-resistance
Ron
−
Typ.
−
−
−
−
−
50
−
35
3.9
0.7
Max.
−
−
−
0.1
0.1
100
2700
−
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Ω
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=50V
VEB=25V
IC/IB=30mA/3mA
VCE=2V, IC=4mA
VCE=6V, IE=−4mA, f=10MHz
VCB=10V, IE=0A, f=1MHz
IB=5mA, Vi=100mVrms, f=1kHz
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