IMT4T108 Datasheet, PDF (1/3 Pages) Rohm – General purpose (dual transistors)

Transistors
IMT4
General purpose (dual transistors)
IMT4
zFeatures
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
zPackage, marking, and Packaging specifications
Part No.
IMT4
Package
Marking
Code
Basic ordering unit (pieces)
SMT6
T4
T108
3000
zEquivalent circuit
IMT4
(4) (5) (6)
Tr2
Tr1
(3) (2) (1)
zExternal dimensions (Unit : mm)
IMT4
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
∗200mW per element must not be exceeded.
Limits
−120
−120
−5
−50
300 (TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW
∗
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
VCE(sat)
Min. Typ. Max. Unit
Conditions
−120
−
−
V IC=−50µA
−120
−
−
V IC=−1mA
−5
−
−
V IE=−50µA
−
−
−0.5
µA VCB=−100V
−
−
−0.5
µA VEB=−4V
180
−
820
−
VCE=−6V, IC−2mA
−
140
−
MHz VCE=−12V, IE=2mA, f=100MHz
∗
−
−
−0.5
V IC/IB=−10mA/−1mA
Rev.A
1/2