IMT17 Datasheet, PDF (1/3 Pages) Rohm – General purpose transistor (isolated dual transistors)

Transistors
IMT17
General purpose transistor
(isolated dual transistors)
IMT17
zApplications
General purpose small signal amplifier
zFeatures
1) Two 2SA1036K chips in an SMT package.
2) Same size as SMT3 package, so same mounting
machine can be used for both.
3) Transistor elements are independent, eliminating
interference.
4) High collector current. IC = −500mA
5) Mounting cost, and area, are reduced by one half.
zExternal dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95 0.95
1.1^{+−00..21}
0.8±0.1
(4) (5) (6)
(3) (2) (1)
0.3_{−+00..015}
0.15^{+−00..106}
All terminals have same dimensions
0 to 0.1
(4) (5) (6)
Tr1
Tr2
(3) (2) (1)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: T17
zStructure
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zPackaging specifications
Packaging type
Code
Part No. Basic ordering unit (pieces)
IMT17
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗ 200mW per element must not be exceeded.
Limits
−60
−50
−5
−500
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW ∗
°C
°C
zElectrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −60
−
−
V IC= −100µA
Collector-emitter breakdown voltage BVCEO −50
−
−
V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5
−
−
V IE= −100µA
Collector cutoff current
ICBO
−
− −0.1
µA V= −30V
Emitter cutoff current
IEBO
−
− −0.1
µA V= −4V
Collector-emitter saturation voltage VCE(sat) −
− −0.6
V IC/IB= −500mA/ −50mA
DC current transfer ratio
hFE
120
−
390
− VCE= −3V, IC= −100mA
∗
Transition frequency
fT
−
200
− MHz VCE= −5V, IE= 20mA, f= 100MHz
Output capacitance
∗ Measured using pulse current.
Cob
−
7
−
pF VCB= −10V, IE= 0A, f= 1MHz
Taping
T110
3000
Rev.A
1/2