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IMN10_13 Datasheet, PDF (1/4 Pages) Rohm – Switching Diode Ultra high speed switching High reliability. | |||
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Switching Diode
IMN10
Datasheet
ï¬Application
Ultra high speed switching
ï¬Features
1) Small mold type. (SMD6)
2) High reliability.
ï¬Construction
Silicon epitaxial planar
ï¬Dimensions (Unit : mm)
2.9±0.2
0.3±0.1
0.05
åãªã¼Eaãchã¨leãadåh寸asæ³same dimension
(4)
(5)
(6)
0.15±0.1
ã ãã0.06
ãï¬Land size figure (Unit : mm)
19
0.95 0.95
0.6
0.45 0.35 0.35 0.45
(3)
(2)
(1)
1.9±0.2
0.95
0.95
0ï½0.1
SMD6
0.8±0.1
1.1±0.2
0.1
ãï¬Structure
ROHM : SMD6
JEDEC : S0T-457
JEITA : SC-74
week code
1Pin Mark
ï¬Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
Ï1.55±0.1
ããããã 0
0.8MIN.
Anode
Cathode
0.3±0.1
3.2±0.1
4.0±0.1
Ï1.05MIN
1.35±0.1
ï¬Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Forward current (Single)
IFM
Forward current (Double)
IFM
Average rectified forward current (single) Io
80
V
80
V
300
mA
450
mA
100
mA
Surge current (t=1ïs)
Isurge
4
A
Power dissipation (TOTAL)(*1)
Pd
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
ï55 to ï«150 °C
(*1) Not exceed 200mW per element.
ï¬Electrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF
-
- 1.2 V IF=100mA
IR
-
- 0.1 ïA VR=70V
Ct
- - 3.5 pF VR=6V, f=1MHz
trr
-
-
4 ns VR=6V, IF=5mA,RL=50ï
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© 2013 ROHM Co., Ltd. All rights reserved.
1/3
2013.02 - Rev.D
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