IMN10-T108 Datasheet, PDF (1/5 Pages) Rohm – Switching Diode

Switching Diode
IMN10
Datasheet
Application
Ultra high speed switching
Features
1) Small mold type. (SMD6)
2) High reliability.
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
2.9±0.2
0.3±0.1
0.05
各リー_Eaド_chと_leも_ad同_h寸_as法_{same dimension}
(4)
(5)
(6)
0.15±0.1
　 　　0.06
　Land size figure (Unit : mm)
19
0.95 0.95
0.6
0.45 0.35 0.35 0.45
(3)
(2)
(1)
1.9±0.2
0.95
0.95
0～0.1
SMD6
0.8±0.1
1.1±0.2
0.1
　Structure
ROHM : SMD6
JEDEC : S0T-457
JEITA : SC-74
week code
1Pin Mark
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
　　　　　 0
0.8MIN.
Anode
Cathode
0.3±0.1
3.2±0.1
4.0±0.1
φ1.05MIN
1.35±0.1
Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Forward current (Single)
I_FM
Forward current (Double)
I_FM
Average rectified forward current (single) Io
80
V
80
V
300
mA
450
mA
100
mA
Surge current (t=1s)
I_surge
4
A
Power dissipation (TOTAL)(*1)
Pd
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150 °C
(*1) Not exceed 200mW per element.
Electrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
V_F
-
- 1.2 V I_F=100mA
I_R
-
- 0.1 A V_R=70V
Ct
- - 3.5 pF V_R=6V, f=1MHz
trr
-
-
4 ns V_R=6V, I_F=5mA,RL=50
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2013.02 - Rev.D