IMH23T110 Datasheet, PDF (1/3 Pages) Rohm – Dual digital transistors

Transistors
Dual digital transistors
IMH23
IMH23
zFeatures
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
IC=600mA.
3) Two DTC643T chips in a SMT package.
zStructure
NPN digital transistor
(Built-in resistor type)
zExternal dimensions (Unit : mm)
SMT6
1.6
1pin mark
2.8
0.3Min.
Each lead has same dimensions
Abbreviated symbol : H23
zEquivalent circuit
(4)
(5)
(6)
R1
R1
R1=4.7kΩ
(3)
(2)
(1)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ 200mW per element must not be a exceeded.
Limits
20
20
12
600
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW ∗
°C
°C
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