IMD10A Datasheet, PDF (1/3 Pages) Rohm – Power management (dual digital transistors)

IMD10A
Transistors
Power management (dual digital transistors)
IMD10A
zFeatures
1) Two digital transistors in a SMT package.
2) Up to 500mA can be driver.
3) Low V_{CE (sat)} of driver transistors for low power dissipation.
zCircuit diagram
(4) (5) (6)
R2
R1
DTr2
DTr1
R1
(3)
(2)
(1)
R1=10kΩ
R2=100Ω
zPackage, marking, and
packaging specifications
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
IMD10A
SMT6
D10
T108
3000
zAbsolute maximum ratings (Ta=25°C)
DTr1
Parameter
Supply voltage
Input voltage
Collector current
Symbol
VCC
VIN
IC
Limits
−50
−5 to +5
−500
DTr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
50
50
5
100
Total
Parameter
Symbol
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗ 200mW per element must not be exceeded.
Limits
300(TOTAL)
150
−55 to +150
Unit
V
V
mA
Unit
V
V
V
mA
Unit
mW ∗
°C
°C
zElectrical characteristics (Ta=25°C)
DTr1
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ ^{Transition frequency of the device.}
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2 / R1
DTr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗ ^{Transition frequency of the device.}
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R1
Min.
−
−1.5
−
−
−
68
−
70
80
Typ.
−
−
−0.1
−
−
−
200
100
100
Max.
−0.3
−
−0.3
−25
−0.5
−
−
130
120
Unit
V
V
mA
µA
−
MHz
Ω
−
Conditions
− − VCC= 5V , IO= 100µA
− − VO= 0.3V , IO= 100mA
− − IO= 100mA , II= 5mA
− VI= 2V
− VCC= 50V , VI=0V
− − IO= 100mA , VO= 5V
− VCE= 10V , IE=50mA , f=100MHz
−
−
Min.
50
50
5
−
−
−
100
−
7
Typ.
−
−
−
−
−
−
250
250
10
Max.
−
−
−
0.5
0.5
0.3
600
−
13
Unit
V
V
V
µA
µA
V
−
MHz
kΩ
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC=10mA , IB=1mA
VCE=5V , IC=1mA
− VCE=10V , IE= 5mA , f=100MHz
−
Rev.A
∗
∗
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