IMB10AT110 Datasheet, PDF (1/8 Pages) Rohm – PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors

EMB10 / UMB10N / IMB10A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ^Datasheet
Parameter
V_CC
I_C(MAX.)
R₁
R₂
Tr1 and Tr2
50V
100mA
2.2k
47k
Features
1) Built-In Biasing Resistors.
2) Two DTA123J chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
Outline
EMT6
(6)
(5)
(1)
(4)
(2)
(3)
EMB10
(SC-107C)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMB10A
SOT-457 (SC-74)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMB10N
SOT-353 (SC-88)
Inner circuit
EMB10 / UMB10N
OUT
IN
(6)
(5)
GND
(4)
IMB10A
OUT
IN
(4)
(5)
GND
(6)
Application
Inverter circuit, Interface circuit, Driver circuit
(1)
(2)
GND
IN
(3)
OUT
(3)
(2)
GND
IN
(1)
OUT
Packaging specifications
Part No.
Package
EMB10
UMB10N
IMB10A
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TN
T110
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180
8
8,000
180
8
3,000
180
8
3,000
Marking
B10
B10
B10
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2014.10 - Rev.E