HS8K1 Datasheet, PDF (1/19 Pages) Rohm – 30V Nch plus Nch Middle Power MOSFET

HS8K1
　　30V Nch+Nch Middle Power MOSFET
Symbol
V_DSS
R_DS(on)(Max.)
I_D
P_D
Tr1:Nch Tr2:Nch
30V 30V
14.6mΩ 11.8mΩ
±10A ±11A
2.0W
lFeatures
1) Low on - resistance.
2) Pb-free lead plating ; RoHS compliant.
3) Halogen Free.
lOutline
HSML3030L10
HSML3030L10
　
　
　　　　　　
lInner circuit
　　 ^Datasheet
　
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
8.0
3000
Taping code
TB
Marking
HS8K1
lAbsolute maximum ratings (T_a = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Tr1:Nch Tr2:Nch
Drain - Source voltage
V_DSS
30 30
V
Continuous drain current
I_D
±10 ±11
A
Pulsed drain current
I_DP*1
±40 ±44
A
Gate - Source voltage
V_GSS
±20 ±20
V
Avalanche current, single pulse
I_AS*2
10
11
A
Avalanche energy, single pulse
E_AS*2
7.6 9.1
mJ
Power dissipation
P_D*3
2.0
W
Junction temperature
T_j
150
℃
Operating junction and storage temperature range
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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