FMW3 Datasheet, PDF (1/1 Pages) Rohm – General purpose (dual transistors)

Transistors
FMW3 / FMW4 / IMX8
General purpose (dual transistors)
FMW3 / FMW4 / IMX8
!Features
1) Two 2SC3906K chips in an SMT package.
2) High breakdown voltage.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
∗ 200mW per element must not be exceeded.
Limits
120
120
5
50
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
mW ∗
°C
°C
!Package, marking, and packaging specifications
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
FMW3
SMT5
W3
T148
3000
FMW4
SMT5
W4
T148
3000
IMX8
SMT6
X4
T108
3000
!Circuit diagrams
FMW3
FMW4
IMX8
!External dimensions (Units : mm)
FMW3
FMW4
1.6
2.8
ROHM : SMT5
EIAJ : SC-74A
0.3to0.6
Each lead has same dimensions
IMX8
ROHM : SMT6
EIAJ : SC-74
1.6
2.8
0.3to0.6
Each lead has same dimensions
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
∗Transition frequency of the device
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
VCE(sat)
Min.
120
120
5
−
−
180
−
−
Typ.
−
−
−
−
−
−
140
−
Max.
−
−
−
0.5
0.5
820
−
0.5
Unit
Conditions
V IC=50µA
V IC=1mA
V IE=50µA
µA VCB=100V
µA VEB=4V
−
VCE=6V, IC=2mA
MHz VCE=−12V, IE=2mA, f=100MHz ∗
V IC/IB=10mA/1mA