FMS3 Datasheet, PDF (1/1 Pages) Rohm – General purpose (dual transistors)

Transistors
FMS3 / FMS4 / IMT4
General purpose (dual transistors)
FMS3 / FMS4 / IMT4
!Features
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
!External dimensions (Units : mm)
FMS3
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
∗200mW per element must not be exceeded.
Limits
−120
−120
−5
−50
300 (TOTAL)
150
−55∼+150
Unit
V
V
V
mA
mW
∗
˚C
˚C
1.6
2.8
ROHM : SMT5
EIAJ : SC-74A
0.3to0.6
Each lead has same dimensions
FMS4
!Package, marking, and Packaging specifications
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
FMS3
SMT5
S3
T148
3000
FMS4
SMT5
S4
T148
3000
IMT4
SMT6
T4
T108
3000
!Circuit diagram
FMS3
FMS4
IMT4
1.6
2.8
ROHM : SMT5
EIAJ : SC-74A
0.3to0.6
Each lead has same dimensions
IMT4
1.6
2.8
ROHM : SMT6
EIAJ : SC-74
0.3to0.6
Each lead has same dimensions
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
VCE(sat)
Min.
Typ. Max.
Unit
Conditions
−120
−
−
−120
−
−
V IC=−50µA
V
IC=−1mA
−5
−
−
V IE=−50µA
−
−
−0.5
µA VCB=−100V
−
−
−0.5
µA VEB=−4V
180
−
820
−
VCE=−6V, IC−2mA
−
140
−
MHz VCE=−12V, IE=2mA, f=100MHz
∗
−
−
−0.5
V
IC/IB=−10mA/−1mA