FMG8AT148 Datasheet, PDF (1/7 Pages) Rohm – NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMG8 / UMG8N
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ^Datasheet
Parameter
V_CC
I_C(MAX.)
R₁
R₂
Tr1 and Tr2
50V
100mA
4.7kW
47kW
lFeatures
1) Built-In Biasing Resistors.
2) Two DTC143Z chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
lOutline
EMT5
(5)
(4)
(1)
(2)
(3)
EMG8
(SC-107BB)
lInner circuit
UMT5
(4)
(3)
(2)
(1)
(5)
UMG8N
SOT-353 (SC-88A)
IN
GND
IN
(3)
(2)
(1)
(4)
OUT
(5)
OUT
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Part No.
Package
EMG8
UMG8N
EMT5
UMT5
Package
size
(mm)
1616
2021
Taping
code
T2R
TR
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180
8
8,000
180
8
3,000
Marking
G8
G8
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2012.06 - Rev.B