FEDD56V62160MTA-06 Datasheet, PDF (1/43 Pages) Rohm – 16-Bit SYNCHRONOUS DYNAMIC RAM

MD56V62160M-xxTA
4-Bank×1,048,576-Word×16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V62160MTA-06
Issue Date : Feb. 12, 2014
DESCRIPTION
The MD56V62160M-xxTA is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated
in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3V. The inputs and
outputs are LVTTL compatible.
FEATURES
Product Name
Organization
Address Size
Power Supply VCC (Core)
Power Supply VCCQ (I/O)
Interface
Operating Frequency
Operating Temperature
Functions
/CAS Latency
Burst Length
Burst Type
Write Mode
Refresh
Package
MD56V62160M-xxTA
xx indicates speed rank.
4Bank x 1,048,576Word x 16Bit
4,096Row x 256Column
3.3V0.3V
3.3V0.3V
LVTTL compatible
Max. 143MHz (Speed Rank 7)
0 to 70°C
General-purpose SDRAM command interface
Mode register CL setting: 2, 3
Mode register BL setting:1, 2, 4, 8, Full page
Mode register BT setting: Sequential, Interleave
Mode register WM setting: Burst, Single
Auto-Refresh: 4,096cycle/64ms(0 to 70°C)
Self-Refresh
54 pin 400 mil Plastic TSOP(2)
Cu Frame, Halogen-Free, Pb-Free
(P-TSOP(2)54-400-0.80-ZK)
PRODUCT FAMILY
VCC
Speed
rank
Family
-7
MD56V62160M-7TA
Output
Drivability
Max.
Frequency
Access Time (Max.)
tAC2
tAC3
EMRS setting 143MHz
5.4ns
5.4ns
3.0V to 3.6V
-75
MD56V62160M-75TA
EMRS setting 133MHz
5.4ns
5.4ns
-10 MD56V62160M-10TA
EMRS setting 100MHz
6ns
6ns
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