FEDD56V62160E-07 Datasheet, PDF (1/33 Pages) Rohm – 16-Bit SYNCHRONOUS DYNAMIC RAM

MD56V62160E
4-Bank  1,048,576-Word  16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V62160E-07
Issue Date: Nov. 18, 2013
DESCRIPTION
The MD56V62160E is a 4-Bank  1,048,576-word  16-bit Synchronous dynamic RAM fabricated in
LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and
outputs are LVTTL compatible.
FEATURES
• Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell
• 4-Bank  1,048,576-word  16-bit configuration
• Single 3.3 V power supply, 0.3 V tolerances
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
- CAS Latency (2, 3)
- Burst Length (1, 2, 4, 8, Full Page)
- Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Packages:
54-pin 400 mil plastic TSOP (TypeII) (P-TSOP(2)54-400-0.80-UK6)
(Product: MD56V62160E-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Family
MD56V62160E-10
Max.
Frequency
100 MHz
Access Time (Max.)
t_AC2
6 ns
t_AC3
6 ns
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