EMX5 Datasheet, PDF (1/2 Pages) Rohm – High transition frequency (dual transistors)

Transistors
EMX5 / UMX5N / IMX5
High transition frequency (dual transistors)
EMX5 / UMX5N / IMX5
!Features
1) Two 2SC3838K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=3.2GHz)
3) Low output capacitance. (Cob=0.9pF)
!Equivalent circuits
EMX5 / UMX5N
(3) (2) (1)
IMX5
(4) (5) (6)
(4)
(5) (6)
(3)
(2) (1)
!External dimensions (Units : mm)
EMX6
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
UMX5N
Each lead has same dimensions
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMX5 / UMX5N
IMX5
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
20
11
3
50
150(TOTAL)
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
mW ^∗1
∗2
°C
°C
!Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX5
EMT5
X5
T2R
8000
UMX5N
UMT6
X5
TR
3000
IMX5
SMT6
X5
T108
3000
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
IMX5
Each lead has same dimensions
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
hFE pairing
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
hFE1 / hFE2
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
20
−
−
V
IC=10µA
11
−
−
V
IC=1mA
3
−
−
V
IE=10µA
−
−
0.5
µA
VCB=10V
−
−
0.5
µA
VEB=2V
27
−
270
−
VCE/IC=10V/5mA
−
−
0.5
V
IC/IB=10mA/5mA
0.5
1
2
−
VCE/IC=10V/5mA
1.4
3.2
−
GHz VCE/IC=10V/10mA, f=200MHz ∗
−
0.9
1.55
pF VCB/f=10V/1MHz, IE=0A