EMX4 Datasheet, PDF (1/2 Pages) Rohm – High transition frequency (dual transistors)

Transistors
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
!Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!Equivalent circuit
EMX4 / UMX4N
(3) (2) (1)
IMX4
(4) (5) (6)
UMW6N
(3) (2) (1)
FMW6
(3) (4) (5)
UMW10
(3) (2) (1)
FMW10
(3) (4) (5)
(4)
(5) (6)
(3)
(2) (1)
(4)
(5)
(2)
(1)
(4)
(5)
(2)
(1)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMX4 / UMW6N / UMW10N / UMX4N
FMW6 / FMW10 / IMX4
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
30
18
3
50
150(TOTAL)
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
hFE pairing
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
hFE1 / hFE2
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
30
−
−
V
IC=10µA
18
−
−
V
IC=1mA
3
−
−
V
IE=10µA
−
−
0.5
µA VCB=10V
−
−
0.5
µA VEB=2V
27
−
270
−
VCE/IC=10V/10mA
−
−
0.5
V
IC/IB=20mA/4mA
0.5
1
2
−
VCE/IC=10V/10mA
600
1500
−
MHz VCE/IC=10V/10mA, f=200MHz ∗
−
0.95
1.6
pF VCB/f=10V/1MHz, IE=0A