EMX3T2R Datasheet, PDF (1/4 Pages) Rohm – General purpose (dual transistors)

General purpose (dual transistors)
EMX3 / UMX3N / IMX3
Features
Two 2SC2412AK chips in a EMT or UMT or SMT package.
Inner circuits
EMX3 / UMX3N
(3) (2) (1)
IMX3
(4) (5) (6)
Tr2
Tr2
Tr1
Tr1
(4)
(5) (6)
(3)
(2) (1)
Dimensions (Unit : mm)
EMX3
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
Each lead has same dimensions
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX3
EMT6
X3
T2R
8000
UMX3N
UMT6
X3
TR
3000
IMX3
SMT6
X3
T108
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power ^{EEMX3 / UMX3N}
dissipation
IMX3
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
7
150
150(TOTAL)
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
UMX3N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
IMX3
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
60
−
−
V
IC=50μA
50
−
−
V
IC=1mA
7
−
−
V
IE=50μA
−
−
0.1
μA VCB=60V
−
−
0.1
μA VEB=7V
−
−
0.4
V
IC/IB=50mA/5mA
120
−
560
−
VCE=6V, IC=1mA
−
180
−
MHz VCE=12V, IE=−2mA, f=100MHz ∗
−
2
3.5
pF VCB=12V, IE=0mA, f=1MHz
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2011.12 - Rev.B